We also are authors or coauthors of the following papers “Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability” “Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions” “Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory”Read More
INTERSECT will create an IM2D flow based on an Interoperable Material-to-Device simulation platform that will integrate the most widely used open-source materials modelling codes (Quantum ESPRESSO and SIESTA) with models and modelling software for emerging devices (Ginestra™). The platform will use the SimPhony infrastructure for semantic interoperability and ontologies, powered by the AiiDA workflow engine, and its data-on-demand capabilities and apps interface. API-compliance with established standards will allow pipelines to and from public repositories, and will be embedded into the front-end of materials hubs, such as MarketPlace
The objectives of the interdisciplinary project IQubits are to (i) develop and demonstrate experimentally high-temperature (high-T) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm Fully-Depleted Silicon-on-Insulator (FDSOI) CMOS foundry technology as the enabling fundamental building blocks of quantum computing technologies, (ii) verify the salability of these qubits to 10nm dimensions through fabrication experiments and (iii) prove through atomistic simulations that, at 2nm dimensions, they are suitable for 300K operation.
Ginestra is the only simulation tool on the market that can accurately predict device characteristics from the microscopic properties of material stacks such as those used in 3D NAND charge trapping devices
Larcher, L., Padovani, A., Di Lecce, V.Read More
Milan Pešić ; Taide Li ; Valerio Di Lecce ; Michael Hoffmann ; Monica Materano ; Luca LarcherRead More
M. Pešić ; V. Di Lecce ; M. Hoffmann ; H. Mulaosmanovic ; B. Max ; U. Schroeder ; S. Slesazeck ; L. LarcherRead More
Padovani, A., Larcher, L., Woo, J., Hwang, H.Read More